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Electronic Devices and Communication Systems Test - 3
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Electronic Devices and Communication Systems Test - 3
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  • Question 1/10
    1 / -0

    The following question has four choices out of which ONLY ONE is correct.

    If the forward voltage in a diode increases, the width of the depletion region

    Solutions

    With the increase in forward bias, the barrier potential decreases because of which the current increases. Hence, width of the depletion region decreases .

     

  • Question 2/10
    1 / -0

    The current gain (β) of a transistor in common emitter mode is 40. To change the collector current by 160 mA at constant VCE, the necessary change in the base current is

    Solutions

    The current gain in the common emitter configuration is

     

  • Question 3/10
    1 / -0

    In a common base circuit of a transistor, the current amplification factor is 0.95. What is the base current when emitter current is 2 mA?

    Solutions

    Current gain of common base circuit,

     

  • Question 4/10
    1 / -0

    In a common emitter configuration of a transistor, the voltage drops across a 500 Ω resistor in the collector circuit of 0.5 V. If the current gain in the common base mode is 0.96, then the base current is

    Solutions

     

  • Question 5/10
    1 / -0

    In the given circuit, the current through the resistor of 2 kΩ is

    Solutions

    The current through the resistor of 2 kΩ can be calculated as follows:

    I = 6 mA

    As the voltage across the 2kΩ = Voltage across the zener diode

     

  • Question 6/10
    1 / -0

    A p-n junction diode is connected to a battery of emf 5.5 V and external resistance of 5.1 kΩ. The barrier potential in the diode is 0.4 V. The current in the circuit is

    Solutions

    The potential difference across the resistance = 5.5 - 0.4 = 5.1 V.

    The current through the resistance is I.

    So, V = IR

    I = 1 mA

     

  • Question 7/10
    1 / -0

    The minimum potential difference between the base and emitter required to switch a silicon transistor 'ON' is approximately

    Solutions

    The minimum potential difference between the base and emitter required to switch a silicon transistor 'ON' is approximately 1 V. To switch on the transistor, the emitter-base junction of a transistor is forward biased while collector-base junction is reverse biased. The cut-off voltage for silicon is 1 V. So to switch on a silicon transistor, a potential difference of 1 V approximately is required between the base and emitter.

     

  • Question 8/10
    1 / -0

    In the circuit given below, an A.C. voltage V = 220 volt (r.m.s.) is applied. The maximum voltage across the capacitor will be

    Solutions

    The maximum voltage across the capacitor will be Vmax = Vr.m.s × √2 = 220  × √2

     

  • Question 9/10
    1 / -0

    A p-type semiconductor has acceptor levels 57 meV above the valence band. The wavelength of light required to create a hole is

    Solutions

     

  • Question 10/10
    1 / -0

    Two triodes A and B have the amplification factor of 40. The plate and load resistances are 4kΩ and 8kΩ, respectively. If an amplifier circuit is made using only one of them with a load resistance of 8 kΩ, then what will be the ratio of voltage gains obtained from them?

    Solutions

     

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